| 摘要 |
<p>A voltage nonlinear resistor essentially comprises inorganic semiconductor fine particles, and at least one of the oxides of metal elements of the groups IIIA, IIIB, IVA, IVB, VA, VIIB and VIII of the periodic table, and includes an inorganic insulating film layer that covers the surfaces of the semiconductor fine particles. The semiconductor fine particles are used as a starting material for the inorganic semiconductor, and are subjected to at least one time of baking step at a temperature higher than 1000 DEG C and to at least one time of pulverizing step after at least one time of the baking step. The semiconductor fine particles are mixed with a starting compound that contains at least one of said metal elements and that forms inorganic oxides thereof, and the mixture is baked at a temperature higher than 1000 DEG C such that an insulating film layer consisting essentially of at least one inorganic oxide of said metal element is formed on the surfaces of the semiconductor fine particles.</p> |
