| 摘要 |
<p>PURPOSE:To obtain sensitivity over a wide range from a visible region to a near infrared region by using InxGa1-xAs being III-V compound semiconductor as an active layer and ZnSeyTe1-y being II-VI compound semiconductor as a window material. CONSTITUTION:In a transmission semiconductor photoelectric surface 10, a photon transmitting substrate 13, a window material 14 comprising 3-component compound expressed by a general expression of ZnSeyTe1-y and an epitaxial layer 16 grid-aligned with the window material 14 comprising 3-component compound expressed by a general expression of InxGa1-xAs are laminated in this sequence to have the side of a substrate 12 to be a photo input surface and a free surface of the epitaxial layer 16 to be an electron emitting surface. An SiO2 reflection preventing film layer 18 is interposed between the substrate 12 and the window material 14. The compositions of the window material 14 and the epitaxial layer 16 are selected so that they are mutually grid-aligned in ranges of 0<=y<=0.25 and 0.04<=x<=0.30.</p> |
