| 摘要 |
PURPOSE:To elevate a COD level and to obtain a high output by using the anodizing film of semiconductor itself as a reflecting-surface protective film. CONSTITUTION:Laser end-faces are anodized and the anodizing films 5 of semiconductor itself are acquired in a clad layer 1, in which light and currents arc confined on laser operation, an active layer 2, in which light is generated, the reflecting surfaces 3 of a laser and reflecting-surface protective films 4. The thickness of the anodizing film 5 is thinned extremely as approximately several dozen or one hundred Angstrom . The thickness of the anodizing film 5 is thinned extremely because the reflectivity of the laser end-face is not subject to the influence in order to control the reflectivity of the laser end-face by the reflecting-surface protective film 4. |
