发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To lessen in a pin grid array inter-wiring capacitance by a method wherein the pin grid array is formed on an insulating board, where the ends of wirings are made to terminate so as not to extend to the outer edge of the insulating board. CONSTITUTION:The ends of wirings 3 formed on the primary face of an insulating board 2 are connected to an electrode pad 7 of a semiconductor chip 4 through the intermediary of wired 6 of Au, Al, or the like. A through-hole land 8 which is formed of the same material and in the same process with the wirings 3 is provided to each of the other ends of the wirings 3. That is, the ends of the wirings 3 are made to terminate at the through-hole lands 8 respectively and not extended to the outer edge of the insulating board 2. Therefore, the insulating board 2 is shortened in wiring length and decreased in inter- wiring capacitance, so that a signal processing can be carried out at a higher speed. A short circuit hardly occurs between wirings at the outer edge of the insulating board 2, so that a pin grid array 1 is improved in reliability.
申请公布号 JPH0376253(A) 申请公布日期 1991.04.02
申请号 JP19890212609 申请日期 1989.08.18
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 EMATA KOJI;OKINAGA TAKAYUKI;MATSUGAMI SHOJI;OGUMA HIROSHI;OTSUKA KANJI
分类号 H01L23/12 主分类号 H01L23/12
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