SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To realize electromagnetic shielding for data lines and avoid noise and facilitate stabilization of the operation by a method wherein a conductive layer whose potential can be fixed to a constant potential is provided between the data lines and on the data lines of a memory cell. CONSTITUTION:Predetermined data lines 3 are formed on a semiconductor substrate 1, on which a predetermined isolation region 2 and a switching MOS transistor are formed, thorough a lower layer insulating film 2a. A conductive layer 5 is formed between the data lines 3 and on the data lines 3 through a first insulating film 4. Therefore, the circumference of the data lines 3 of a memory cell which is composed of a one transistor/one data storage region which requires reduced interference noise between lines is surrounded by the conductive layer 5 whose potential can be fixed to a constant potential for electromagnetic shielding, so that a DRAM which can operate stably with no influence of noise can be obtained.