| 摘要 |
PURPOSE:To increase the area of a storage electrode by forming a rectangular storage electrode at the crossing part of two perpendicular stripelike patterns in two photolithography etching steps. CONSTITUTION:A base structure is formed of an element region 21 and a word line 22 on a semiconductor substrate, further provided with a cell contact 23, and a polysilicon film 24 is formed on the whole surface. When a resist pattern 25 is formed in a stripe state perpendicularly to the line 22 to cover a part to become a storage electrode thereon in a photolithography step, the two patterns 25 are adjacently formed. Then, after the film 24 is etched to form a stripelike pattern 25 including the part to become the storage electrode, a resist pattern 27 is formed in a stripe state parallel to the line 22 to cover the part in a photolithography step and the pattern 26 is etched. Thereafter, only a rectangular stripelike pattern part of the crossing part remains, and a storage electrode 28 is completed. As a result, the rounding of the corner of the electrode can be prevented to increase the area of the electrode. |
