| 摘要 |
PURPOSE:To return graphite component to diamond component by irradiating a diamond added with impurity by an ion implanting method with a laser light of a pulse light, and emitting in vacuum, in inert gas or hydrogen gas of an atmosphere. CONSTITUTION:An intrinsic or B-added diamond layer 2 is formed on a base 1 formed with a silicon nitride 1-2 film on a silicon substrate 1-1, a silicon nitride film 7 is formed thereon, a photoresist 8 is formed, and with it as a mask the film 7 is selectively removed. Further, with it as a mask impurity is added into the diamond by an ion implanting method to selectively form an impurity region 10. The base is disposed on a holder 37 in a chamber 40 of a laser annealing apparatus, and the base 30 is emitted with a laser light from an excimer laser 31 through an optical system 32 via a quartz window 36. The chamber 40 is evacuated to vacuum degree of 1X10<-6>-1X10<-10>Torr. Its pulse width is 5-50 nsec, and its frequency is 0-30PPS. As a result, graphite component is returned to the original diamond component, and the added impurity can be activated. |
