| 摘要 |
PURPOSE:To improve the uniformity and the film forming speed by using a diamond substrate and forming cubic-crystal boron nitride, such as N type boron nitride, thereon. CONSTITUTION:Crystals are grown while diamond to which for example P type impurities are added with high concentration is doped with N type silicon. That substrate 1 is put in a microwave plasma CVD apparatus having magnetic fields. Reactive gas and carrier gas are introduced through doping systems 31, 32, 33, 34, 35, and 36. With B2H6/NH3=0.5-2 and (B2H6+NH3)/H2=1-10vol.%, 0.1-3vol.% of SiH4/(B2H6+NH3) is added. Then B and N components decom posed and formed into plasma by microwave energy are grown on the substrate and single-crystal boron nitride (also called CBN having cubic-crystal boron nitride idiomorphic faces) can be grown. |
