| 摘要 |
PURPOSE: To accelerate deposition of silicon dioxide by introducing a gas for blocking deposition of silicon dioxide on the surface of a substrate into an atmosphere, and applying a high frequency output higher than a specified level to generate a high frequency plasma thereby lowering the density of blocking gas on the horizontal plane of the substrate. CONSTITUTION: A silicon dioxide layer 42 is deposited on a silicon wafer 43 by CVD. Horizontal planes 39, 41 of a metal conductor 40 and a CVD silicon dioxide 42 are formed on the substrate after deposition of SiO2 . During deposition of a silicon dioxide 35, NH3 molecules serve to block reaction of depositing silicon dioxide. But in case of high RF output of 100W or above, more active collision of molecules from a plasma takes place on the horizontal planes 39, 41 than on a vertical plane 44. Consequently, surface density of NH, is decreased on the horizontal planes as compared with the vertical plane. Consequently, TEOS molecules migrate quickly to occupy an effective part on the horizontal plane where a reaction takes place to form SiO2 .
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