发明名称 |
Multiple trench semiconductor structure method |
摘要 |
A method of fabricating multiple trench semiconductor structures wherein a preferred embodiment includes forming an epitaxial silicon layer on a silicon substrate and a dielectric layer on the epitaxial silicon layer. An opening is then formed which extends through the dielectric layer and into the epitaxial silicon layer. Sidewall spacers are formed in the opening and an oxide lens is formed in the opening between the sidewall spacers. The sidewall spacers are then removed and trenches are formed in the opening where the sidewall spacers were formerly disposed.
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申请公布号 |
US5004703(A) |
申请公布日期 |
1991.04.02 |
申请号 |
US19890382947 |
申请日期 |
1989.07.21 |
申请人 |
MOTOROLA |
发明人 |
ZDEBEL, PETER J.;VASQUEZ, BARBARA |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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