| 摘要 |
PURPOSE:To enhance the open terminal voltage and a short-circuiting photocurrent of an amorphous photovoltaic element by forming at least one of first and second conductivity type semiconductor thin films of II-VI-V2 compound semiconductor thin film. CONSTITUTION:A conductivity type II-VI-V2 semiconductor thin film 3 is formed of compound semiconductor of P such as ZnSiP3nGeP2, etc. The conductivity type of the compound is controlled to be p-type or n-type by modulating a composition in addition to doping of impurity. In the case of a ZnSiP2 film, high frequency power is independently controlled by using three types of target of Zn, Si and P metals, composition in the film is controlled, and sputtered. If the conductivity type of the thin film is p-type, the other conductivity type semiconductor thin film 5 exhibits n-type properties. The substrate 1 is made of blue plate glass quartz, etc., and the second electrode is made of meal oxide such as tin oxide 2, indium oxide, etc., or light transmission metal, etc. As a result, the open terminal voltage and short-circuiting current of an amorphous photoelectric converter can be improved. |
