发明名称 |
Method of forming isolation region in integrated circuit semiconductor device |
摘要 |
A method of manufacturing an isolation region including a field oxide layer and a channel stopper impurity region is disclosed. The channel stopper impurity region is formed after forming the field oxide layer by introducing ions of impurity at a portion of the substrate through the field oxide layer by ion-implantation manner.
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申请公布号 |
US5004701(A) |
申请公布日期 |
1991.04.02 |
申请号 |
US19890303721 |
申请日期 |
1989.01.27 |
申请人 |
NEC CORPORATION |
发明人 |
MOTOKAWA, KAZUMASU |
分类号 |
H01L21/76;H01L21/762;H01L27/108 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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