SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF

摘要

The method for preventing a short between the conductor connecting a switching transistor to a capacitor and the conductor for the gate of switching transistor, comprises the steps: forming a first trench (4) with thick insulating film (5) and a second trench (6) with thin insulating film (8); filling a polysilicon (9) into the first and second trenches (4,6) to form a capacitor and etching the upside of the thick insulating film (5); filling a polysilicon (11) therein and planarizing the surface of the substrate; and forming the source and drain region (18) of the transistor connected through the side wall of the polysilicon (11).