发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To suppress the fault rate of redundancy word line or a redundancy data line after saving a defect by executing switching to the redundancy word line or the redundancy data line only by a memory array or a memory mat including a defective word line or a defective data line. CONSTITUTION:The memory array SM or the memory mat MAT including the defective word line or defective data line is discriminated and the switching to the redundancy word line Wr0 or a redundancy data line is selectively execut ed only by the discriminated memory array SM or memory mat MAT. Conse quently, the fault rate of the redundancy word line Wr0 or redandancy data line after saving the defect can be suppressed and the number of required redun dancy word lines or redundancy data lines to be connected can be reduced.
申请公布号 JPH0373499(A) 申请公布日期 1991.03.28
申请号 JP19890207801 申请日期 1989.08.14
申请人 HITACHI LTD 发明人 TAKAHASHI YASUSHI
分类号 G11C29/00;G11C11/401;G11C29/04;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C29/00
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