LIGHT EMITTING DEVICE AND ITS MANUFACTURE, AND OPTICAL MEMORY DEVICE

摘要

PURPOSE:To obtain a light emitting device which is high in the high conversion effi ciency of a secondary higher harmonic by providing at least a laminated laser beam generation part and a thin-film type secondary-higher -harminc generating optical waveguide on the same semiconductor substrate and arranging the laser light genera tion part and optical waveguide on the same plane. CONSTITUTION:The double heterojunction semiconductor laser 102 and ridge type optical waveguide 103 are integrated in monolithic structure on a substrate 101 and the laser 102 and optical waveguide 103 are brought into contact with each other in an end surface on the same plane. A dielectric multi-layered film 104 which has a high reflection factor to laser oscillation wavelength #1 is formed on the rear end of the semiconductor laser 102 and a dielectric film 105 which transmits light with wavelength lambda/2 is formed on a side end surface of the ridge type optical waveguide 103. Therefore, guided light is confined to the optical waveguide 103 in the film thick ness direction and the surface direction of the substrate 101, so the light power density is high and sufficient nonlinear mutual operation of light is obtained. Consequently, the conversion efficiency of secondary higher harmonic generation is improved and the high-output light emitting device is obtained.