| 摘要 |
PURPOSE:To expose and form a line and a space interval in the unit of submicron on the entire wafer face by setting a ratio of a line width of a light shield part to a space interval of the light shield part at 0.5 or below so as to form the light shield pattern on a transparent substrate. CONSTITUTION:A quartz glass 12 is used for a transparent mask substrate an a chromium thin film 11 formed as a pattern on the face is used as a light shield pattern, In this case, the ratio of a line width (L) of a light shield part to a Space interval (S) of the light shield part is selected to be 0.5 or below so as to form the light shield pattern on the transparent substrate. For example, the mask is manufactured with L=0.25mum and S=0.5mum. Thus, the pattern is exposed and formed on the entire wafer face and an area unable to form a pattern at the outer circumference of the wafer as a conventional equalized mask is not caused. |
