MULTILAYER METALLIZATION METHOD FOR INTEGRATED CIRCUITS

摘要

Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper-layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging. 0363I