| 摘要 |
A process for the formation of a deposited functional film by separately introducing, into a film-deposition space (A) for forming a deposited film on a substrate, a precursor as the starting material for forming a deposited film which is formed by applying a microwave energy in to a precursor-generating gaseous raw material a decomposition space (B) and an active species which is formed in a decomposition space (C) and which is chemically reactive with the precursor, respectively and chemically reacting them to thereby form a deposited film on the substrate, wherein the inner wall face of a chamber constituting the film-deposition space (A) and the inner wall face of a chamber constituting the decomposition space (C) are coated with a thin film constituted with an element or ingredient constituting the deposited film having a resistance value of 106 OMEGA .cm or more, thereby preventing intrusion of impurities from inner wall material into the deposited film.
|
