| 摘要 |
PURPOSE:To increase dielectric strength for a surge voltage from an external part by providing a first transistor with first channel width to be connected between a power supply terminal and an output terminal and to input a signal from an internal circuit to a gate, second transistor with the second channel width narrower than the first channel width to be connected between a ground terminal and the output terminal, and third transistor with the third channel width. CONSTITUTION:The first transistor T1 with the first channel width is provided to be connected between the power supply terminal (power supply voltage VDD) and the output terminal TM0, and to input the signal from the internal circuit to the gate, and the second transistor T2 with the second channel width narrower than the first channel width is provided to be connected between the ground terminal and output terminal TM0, and to input the signal from the internal circuit to the gate. In order to increase the yield strength of the second transistor T2 to the surge voltage, the third transistor T3, which gate is grounded, is provided parallelly with the second transistor T2 so that the sum of the channel width for this third transistor T3 and the channel width for the second transistor can be equal with the channel width of the first transistor T1. |
