| 摘要 |
PURPOSE:To enhance a semiconductor memory in resistance to soft error caused by an alpha ray even if it is micronized by a method wherein the gate electrode of the drive transistor of an FF and a conductive layer by the gate electrode are made to serve as a pair of electrodes of a capacitive element, and the conductive layer is connected to a power source line. CONSTITUTION:A conductive layer 37 is formed, at least, on the side of a gate electrode 31 of drive transistors(TR) 21 and 22 of an FF 11, and the gate electrode 31 and the conductor layer 37 are made to serve as a pair of electrodes of capacitive elements 12 and 13, and the conductive layer 37 is connected to a power source line 23. By this setup, memory nodes 14 and 15 of a memory cell are connected to the capacitive elements 12 and 13, and the conductive layer 37 is kept at a fixed potential. Even if a semiconductor memory is micronized, the capacitive elements 12 and 13 of large capacitance can be ensured. |
