| 摘要 |
PURPOSE:To make small the occupation area of the element formation region of a multi-emitter transistor by a method wherein a second collector, a second base and a second emitter are formed on a first collector in the order of the second collector, the second base and the second emitter. CONSTITUTION:A first collector 4, a first base 5 and a first emitter 6 are formed on a semiconductor substrate 1. A first semiconductor layer which is used as a first collector 7, a second semiconductor layer which is used as a second base 8 and a third semiconductor layer which is used as a second emitter 9 are formed in order on this collector 4. Moreover, the collectors 4 and 7 are connected to a collector electrode 12 common to the collectors 4 and 7 and the bases 5 and 8 are connected to a base electrode 13 common to the bases 5 and 8. According to a multi-emitter transistor of this structure, the collectors, the bases and the emitters are laminated in the direction vertical to the surface of the substrate. Therefore, even if there are the two emitters, the lateral spread of the area of an element formation region of the multi- emitter transistor within the surface of the substrate can be suppressed small. |
