发明名称 |
SOLID STATE LASER DEVICE FOR LITHOGRAPHY LIGHT SOURCE AND SEMICONDUCTOR LITHOGRAPHY METHOD |
摘要 |
The present invention is devised in consideration of the above-mentioned state of affairs and attempts to actualize a compact solid state laser device of a wavelength as short as that of an excimer laser as a light source for lithography. The present invention relates to a device characterized in providing a solid state laser and nonlinear optical materials which convert a solid state laser ray of light output from the solid state laser in wavelength into a ray of light of a short wavelength and using them as a light source for lithography. Also, the present invention relates to a semiconductor lithography method characterized in converting a laser ray of light output from a solid state laser In wavelength into a ray of light of a short wavelength using nonlinear optical materials and drawing semiconductor circuit patterns by use of the laser ray of light of a short wavelength. Using the present invention, a light source which copes with the degree of integration of ICs after the 16MDRAM and is suitable for IC manufacturing processes can be obtained by a more safe and more simply constituted solid state laser compared with an excimer laser, thereby allowing accurate semiconductor circuit patterns to be formed. |
申请公布号 |
CA2025871(A1) |
申请公布日期 |
1991.03.22 |
申请号 |
CA19902025871 |
申请日期 |
1990.09.20 |
申请人 |
MITSUI PETROCHEMICAL INDUSTRIES, LTD. |
发明人 |
ITANI, AKIRA;SHIMAZAKI, KAZUO |
分类号 |
G02F1/35;G02F1/37;G03F7/20;H01L21/027;H01S3/108 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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