发明名称 SOLID STATE LASER DEVICE FOR LITHOGRAPHY LIGHT SOURCE AND SEMICONDUCTOR LITHOGRAPHY METHOD
摘要 The present invention is devised in consideration of the above-mentioned state of affairs and attempts to actualize a compact solid state laser device of a wavelength as short as that of an excimer laser as a light source for lithography. The present invention relates to a device characterized in providing a solid state laser and nonlinear optical materials which convert a solid state laser ray of light output from the solid state laser in wavelength into a ray of light of a short wavelength and using them as a light source for lithography. Also, the present invention relates to a semiconductor lithography method characterized in converting a laser ray of light output from a solid state laser In wavelength into a ray of light of a short wavelength using nonlinear optical materials and drawing semiconductor circuit patterns by use of the laser ray of light of a short wavelength. Using the present invention, a light source which copes with the degree of integration of ICs after the 16MDRAM and is suitable for IC manufacturing processes can be obtained by a more safe and more simply constituted solid state laser compared with an excimer laser, thereby allowing accurate semiconductor circuit patterns to be formed.
申请公布号 CA2025871(A1) 申请公布日期 1991.03.22
申请号 CA19902025871 申请日期 1990.09.20
申请人 MITSUI PETROCHEMICAL INDUSTRIES, LTD. 发明人 ITANI, AKIRA;SHIMAZAKI, KAZUO
分类号 G02F1/35;G02F1/37;G03F7/20;H01L21/027;H01S3/108 主分类号 G02F1/35
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