发明名称 THIN-FILM TWO-TERMINAL ELEMENT
摘要 <p>PURPOSE:To obtain the thin-film two-terminal element which is small in element area and allows fine working of a high degree by interposing an insulating layer essentially consisting of boron and nitrogen between a 1st conductor and a 2nd conductor. CONSTITUTION:The insulating film 4 of the thin-film two-terminal element formed by interposing the insulating layer 4 between the 1st conductor 2 and the 2nd conductor 3 is formed by using the boron and the nitrogen as its essen tial components. The insulating film essentially consisting of the boron and nitrogen contains at least either of an amorphous or fine crystalline material in terms of structure and form and is generally known as a BN(boron nitride) film [also known as an amorphous BN (a-BN film), c-BN (cubic-BN) film]. The degree of freedom in design is increased in this way and since the BN thin film can be formed hard and thick, the film is hardly susceptible to mechani cal damages and the decrease of pinholes by the formation to a thick film is possible; further, the need for the fine working technique of a high degree is eliminated. This element is advantageous for forming the panel of a larger area.</p>
申请公布号 JPH0367225(A) 申请公布日期 1991.03.22
申请号 JP19890205029 申请日期 1989.08.07
申请人 RICOH CO LTD 发明人 OTA HIDEKAZU;KIMURA YUJI;KONDO HITOSHI
分类号 G02F1/136;G02F1/1365 主分类号 G02F1/136
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