| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor epitaxial layer is formed by misorienting the planar azimuth of single-crystal substrate by 0.1 to 1 degree from plane (111)B and forming the layer by molecular beam epitaxy. The method is described as applied to the fabrication of a GRIN-SCH semiconductor laser of improved quality. |
| 申请公布号 |
GB2202371(B) |
申请公布日期 |
1991.03.20 |
| 申请号 |
GB19870006194 |
申请日期 |
1987.03.16 |
| 申请人 |
* SHARP KABUSHIKI KAISHA |
发明人 |
TOSHIRO * HAYAKAWA;TAKAHIRO * SUYAMA;MASAFUMI * KONDO;KOHSEI * TAKAHASHI;SABURO * YAMAMOTO |
| 分类号 |
H01L21/203;H01L21/20;H01L21/26;H01S5/00 |
主分类号 |
H01L21/203 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
