PROCESS FOR THE PRODUCTION OF AN SIC MASK SUPPORT FOR RADIATION LITHOGRAPHY MASKS

摘要

The invention relates to a method of manufacturing a mask support (diaphragm) of SiC for radiation lithography masks, in which an SiC layer is deposited at least on one of the two major surfaces of a substrate in the form of a silicon single crystal wafer and the silicon single crystal wafer is removed except at an edge region by means of a selective etching step, the mask support being annealed before or after the selective etching step in an oxidizing atmosphere at a temperature in the range of 200 DEG to 1350 DEG C. for a duration of 2 to 10 h.