| 摘要 |
PURPOSE:To make it possible to detect trace impurities in semiconductor crystal having high carrier concentration, by forming an epitaxial crystal of low carrier concentration in the close proximity of semiconductor crystal of measuring object and then diffusing the impurities. CONSTITUTION:It is aimed to measure the impurities in an N type bulk GaAs crystal 1. Using the crystal 1 as a substrate, a P-GaAs eqitaxial crystal 2 is formed by a liquid phase growth method in such a manner as to maintain a low concentration of P type carrier by addition of Ge. Then, the crystals 1 and 2 are held for 1 hour at a growth temperature of 800 deg.C to permit the impurities in the crystal 1 to be diffused into the crystal 2. Then, the impurities are detected by, for example, DLTS method. |
