| 摘要 |
PURPOSE:To decrease an on-gate current and to turn on an element by forming the layer interval of a buried gate layer in an auxiliary thyristor section wider than the layer interval of a buried gate layer in a master thyristor section. CONSTITUTION:The interval dA of a buried gate layer p2<+> in an auxiliary thyristor section GTOA is formed wider than the interval dM of a buried gate p1<+> in a main thyristor section GTOM and constitution is made to supply the main thyristor GTOM with a high gate current by increasing the effective width of a cathode N2 layer and by decreasing an on-gate current Igt in the auxiliary thyristor section GTOA. Therefore, the effective cathode area of the auxiliary thyristor section becomes large to increase the element occupied area of the main thyristor section by the degree of the increased effective cathode area of the auxiliary thyristor section. |
