Method of manufacturing a semiconductor device using ion implantation.

摘要

According to this invention, there is provided to a method of manufacturing semiconductor devices including the steps of ion-implanting at least one impurity (2) selected from As, P, Sb, Si, B, Ga, and A l in a wafer (1) prior to a predetermined manufactural process of semiconductor devices in the semiconductor wafer grown by the Czochralski technique, and thereafter annealing the wafer at a temperature of at least 900 DEG C. Non-uniformity of an impurity concentration of the wafer can be improved. The difference in characteristics among the semiconductor devices manufactured in the wafer is decreased, a product yield can be increased, and the quality of the semiconductor devices can be improved.