| 摘要 |
PURPOSE:To reduce a reflection loss at interfaces of individual layers, to make effective use of light and to enhance a photoelectric conversion efficiency by a method wherein a p-type or n-type noncrystal semiconductor situated on the side of an incident face is formed as a multilayer structure and a refractive index in the individual layers is set to be larger one after another from the incident side. CONSTITUTION:A transparent conductive film 2, a first p-type amorphous silicon layer 3, a second p-type a-Si layer 4, an interface layer 5 composed of undoped hydrogenated amorphous silicon carbide, an i-type hydrogenated a-Si layer 6, an n-type hydrogenated a-Si layer 7 and a metal electrode 8 are laminated and formed one after another on a transparent insulating substrate 1. A refractive index of the first p-type a-Si layer 3 and the second p-type a-Si layer 4 is set to become larger one after another from the incident side. A collection efficiency un a whole wavelength region is enhanced and a reflection loss is reduced; as a result, a conversion efficiency of a photoelectric conversion device is enhanced. |
