| 摘要 |
PURPOSE:To omit steps for forming bumps on a semiconductor chip and to reduce the manufacturing cost of a semiconductor device without decreasing the reliability of the semiconductor device by bonding a lead and a semiconductor chip through a bump that is formed on the lead. CONSTITUTION:The tip of a metallic thin wire 10 is fused, and a metallic ball 11 is formed. The ball 11 is pushed to the tip of a lead 3 on an insulating film 1a. The metallic ball 11 is bonded to the lead 3 by a thermocompression bonding method. With the metallic thin wire 10 being held with a clamp 12, the metallic thin wire 10 is cut at the connecting point with the metallic ball 11. Thus, a bump 4 is formed on the lead 3 of the film carrier tape 1a. The insulating film 1a is selectively etched, and a device holes and outer lead holes are formed. Thus the film carrier tape is completed. The bump 4 at the tip part of the lead 3 is made to correspond to the electrode of a semiconductor chip, and inner lead bonding is performed. Thus, the film carrier type semiconductor device is completed. |
