| 摘要 |
PURPOSE:To enable a silicon semiconductor thin film with an extremely small defect to be formed by irradiating light onto the surface of a hydrogenation silicon thin film within halogenation silicon environment. CONSTITUTION:A device consists of an accumulation room 1 and a dehalogenation hydrogen room 2 which is equipped with hydrogen generation means and the accumulation room has a sputtering device for accumulating a semiconductor thin film. These two rooms are connected by a carrying device 13 and a substrate 10 moves mutually and continuously between two rooms, thus enabling processes of accumulation, hydrogenation, and dehydrogenation halogen reaction to be repeated. The light CVD decomposes silane compound of original material gas using an ultraviolet rays source whose wavelength is equal to or less than 350nm such as a low-pressure mercury lamp, a deuterium lamp, or a rare gas lamp for performing accumulation. As conditions on accumulation, gas flow is selected to be within the range of 1-100sccm and substrate temperature is selected to be 300-500 deg.C appropriately. Reaction pressure is selected to be from 15m torr to atmospheric pressure. |
