| 摘要 |
PURPOSE:To reduce a wiring resistance of a polyside for forming a first electrode and to increase a speed by forming a polysilicon film on the top of the first electrode and a sidewall, and oxidizing the polysilicon to form an insulating film. CONSTITUTION:Polysilicon films 5, 6 are formed on the top of a first electrode laminated with a silicide 4 on a polysilicon 3 and a sidewall, and insulating films 7a, 7b for isolating the first electrode from a second electrode 9 are formed by oxidizing the films 5, 6. As a result, the wiring resistance of the polyside (polysilicon 3/silicide 4) for forming the first electrode is reduced to increase the speed of signals transmitting in the first electrode. |
