| 摘要 |
PURPOSE:To reduce areas of a gate, a source, a contact, etc., occupying the surface of a MOS transistor(Tr) by stereoscopically vertically forming the source, a drain, the gate in a groove. CONSTITUTION:An N<+>-type buried layer 22, an N<+>-type diffused layer 24 and an N-type diffused layer 25 are formed in a semiconductor grown layer 23. A groove is dug on the surface of the semiconductor, and an electrode 26 of a bit line, a gate oxide film 27, a capacitor 28 of an oxide film, an electrode 19 of the capacitor and an electrode 30 of a word line are formed. A MOS Tr and the capacitor are isolated by an oxide film 31. Thus, since the source and the drain layers of the MOS Tr are vertically formed in a stereoscopic structure and the MOS gate is also formed on the sidewall face, plane regions of the source or drain diffused layer, the gate electrode, etc., can be reduced. |
