发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make exposure uniform when a pattern having a minute width and a pattern having a wide width are continuously formed by applying resist on a substrate, performing exposure, forming the latent image of exposure having a minute pattern whose width is specified, and forming the latent image of exposure having a pattern whose width is large. CONSTITUTION:A first exposure mask 4 is used, and the latent image of a minute gate electrode pattern P1 having the width of about 0.5mum and the length of about 2mum is formed. A second exposure mask 5 is used, and the latent image of a pad pattern P2 whose one side is about 2.4mum and width is large is formed. When the width of the pattern is smaller than the value expressed by the expression (1), insufficient exposure around the pattern becomes conspicuous, and the exposure intensity of the entire part around the gate electrode pattern P1 becomes less uniformly by interference. Since the pad pattern P2 is not exposed at the same time, local decrease in exposure strength does not occur in the longitudinal direction of the gate electrode pattern P1.
申请公布号 JPH0362919(A) 申请公布日期 1991.03.19
申请号 JP19890198748 申请日期 1989.07.31
申请人 FUJITSU LTD 发明人 ASAI SATORU;HAIRI ISAMU
分类号 H01L29/812;H01L21/027;H01L21/338 主分类号 H01L29/812
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