| 摘要 |
PURPOSE:To make use of one wafer alignment mark for plural times of exposure process by forming a mask alignment mark with the line width shorter than the limit resolution of a pattern forming system so that the pattern of the mask alignment mark is not transferred onto the wafer alignment mark at the time of exposure. CONSTITUTION:A mask alignment mark 24 for pattern formation mask 20 is formed in square ring shape, and further the size of the ring is made thinner than the limit resolution of a pattern forming system comprising an exposing device, a developing device, an etching device, etc. The pattern formation mask 20 is positioned so that the mask alignment mark 24 of the pattern formation mask 20 is positioned in the center of the wafer alignment mark 18, and a resist layer 16 is exposed by the exposing device, and even if the resist layer 16 is developed, the resist layer 16 is not left at the mask alignment part. |
