| 摘要 |
This disclosure relates to 2 process for producing monocrystalline Group II-VI or Group III-V compounds from the polycrystalline form of said Group I I-VI or Group III-V compound, said process comprising coating the interior surface of a crucible with a powdered solid having a melting point higher than the polycrystalline form of the compound, placing an amount of polycrystalline compound into the coated crucible, heating the crucible to produce a melt while maintaining the powder in solid form and cooling the crucible to produce a solid compound. The preferred powdered solid is pyrolitic boron nitride. The process may be used to produce, inter alia, semiinsulating gallium arsenide having a neutral EL2 concentration between about 0,85 x 1016cm-3 and about 2,0 x 1016cm-3 and a dislocation density between about 500 cm-2 and about 7800 cm-2.
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