| 摘要 |
PURPOSE:To prevent an automatic doping in the step of epitaxially growing by removing a doping of impurity to the back surface of a semiconductor substrate in the step of doping the impurity by an SiO2 covered on the back surface. CONSTITUTION:SiO2 layers 2, 3 are formed on the front and back surfaces of an Si substrate 1, a resist pattern 4 is formed on the layer 2, a protective layer 5 is then formed on the surface of the substrate, and a layer 6 for preventing the etching of the layer 3 is formed on the back surface. Then, the pattern 4 and the layer 6 are retained, and only the layer 5 is selectively removed, is etched, and the pattern 4 and the layer 6 are then removed, a master 2' is formed on the front surface, and impurity is doped on the semiconductor substrate covered with the SiO2 layer on the back surface. |
