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发明名称
FORMATION OF OXIDE FILM ON POLYCRYSTALLINE SILICON SURFACE
摘要
申请公布号
JPH0360033(A)
申请公布日期
1991.03.15
申请号
JP19890194743
申请日期
1989.07.27
申请人
SEIKO INSTR INC
发明人
AKAMINE TADAO
分类号
H01L21/31;H01L21/316
主分类号
H01L21/31
代理机构
代理人
主权项
地址
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