发明名称 THIN FILM STRUCTURE FOR X-RAY LITHOGRAPHY
摘要 <p>PURPOSE: To enable to correct an enlargement error related to an X-ray mask by adhering a thin film having a relatively low dielectric constant on a conductive substrate, before adhering a piezoelectric film having a high dielectric constant. CONSTITUTION: A thin film 12, having a relatively low dielectric constant, is adhered on a conductive substrate 10. Dielectric constant of this thin film 12 isε<10 and is formed by silicon oxide (SiO2 ), silicon nitride, boron nitride(BN) or polyimide. After adhering the thin film 12 of the low dielectric constant, a piezoelectric film 14 of a high dielectric constant is adhered. The dielectric constant of this film is to beε>500. A reed screen-shaped electrode arrangement 16 is applied, and a relatively uniform electric field crossing the gap between the interdigital electrodes in the piezoelectric film 14 can be achieved.</p>
申请公布号 JPH0360013(A) 申请公布日期 1991.03.15
申请号 JP19900190881 申请日期 1990.07.20
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 JIYURAN RAMON MARUDONAADO
分类号 G03F1/22;G03F1/38;G03F1/72;G03F7/20;H01L21/027;H01L41/09 主分类号 G03F1/22
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