发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the dimension accuracy of a bending position by annealing only the bending part of an external electrode before it is subjected to bending process. CONSTITUTION:A plurality of external electrodes 11 are set on an alignment jig 12, in an aligned state: specified bending parts of the external electrodes 11 are irradiated with laser beam from above as shown by an arrow A: each of the external electrodes 11 is scanned in the width direction, with the laser beam as shown by an arrow B, thereby annealing the bending parts. After that, each of the external electrodes is built in the main body of a power device; a fixing part 11a of the external electrode 11 and a semiconductor device are connected with a wire. By bending an annealing part 13 of the external electrode 11 almost at right angles, the main body part of a power device can be assembled. At the time of bending process, the part where bending stress concentrates has been softened by annealing, so that the bending process is facilitated and further surely performed.
申请公布号 JPH0360147(A) 申请公布日期 1991.03.15
申请号 JP19890197514 申请日期 1989.07.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAGUCHI TETSUJI
分类号 H01L23/48 主分类号 H01L23/48
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