| 摘要 |
PURPOSE:To cause effective growth of a (poly)diacetylene thin film of the order of millimeter on a substrate by using a single crystal of (poly)diacetylene as a substrate in the epitaxial growth of (poly)diacetylene on a substrate. CONSTITUTION:A process for epitaxially growing diacetylene or polydiacetylene on a substrate, wherein a single crystal of diacetylene or polydiacetylene is used as the substrate. According to a conventional organic molecular beam epitaxy, the obtained diacetylene or polydiacetylene thin film is a polycrystal comprising particles of the order of micrometer and is not effective as a waveguide because of, for example, scattering during the guide of light wave. According to this invention, a large-area epitaxial film can be grown. |
