SILICON RADIATION DETECTOR

摘要

The solution concerns the silicon radiation detector, which is used for detection of energy detectors over 500 eV and radiation detection in the range between 200 and 1,100 nm. The goal is to achieve higher efficiency for the detection in the wide range of radiation by means of the simple detector and to achieve higher puncture voltage when preserving this efficiency. The mentioned goal is achieved by the fact that the detection surface of shallow diffusion of the type P with the acceptor concentration between 10<15> and 10 <17> of atoms/cm<3> is created into the depth between 40 and 100 nm, while it overlaps , by the one sixth to one eighth of the width of the collecting belt P<+>, this collecting belt P<+> with the width from 150 to 300 μm and concentration of acceptors between 10<20> and 10 <21> atoms/cm<3> into the depth between 0.5 to 3 μm, being covered with the conducting layer, to advantage NiCr. The solution can be used with measuring technique that works with the detection of X-ray, electronic and other short-wave radiation.