发明名称 |
Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers |
摘要 |
High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
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申请公布号 |
US4999315(A) |
申请公布日期 |
1991.03.12 |
申请号 |
US19890450973 |
申请日期 |
1989.12.15 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
JOHNSTON, JR., WILBUR D.;KARLICEK, JR., ROBERT F.;LONG, JUDITH A.;WILT, DANIEL P. |
分类号 |
C30B25/02;H01L21/205;H01L33/00;H01L33/24;H01L33/30;H01S5/223;H01S5/227;H01S5/24 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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