BI-MOS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF,申请号JP19890193274-传众专利搜索

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发明名称	BI-MOS SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要
申请公布号	JPH0357266(A)	申请公布日期	1991.03.12
申请号	JP19890193274	申请日期	1989.07.26
申请人	MITSUBISHI ELECTRIC CORP	发明人	HIGASHIYA KEIICHI
分类号	H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L29/732	主分类号	H01L29/73
代理机构		代理人
主权项
地址

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