发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To satisfy both a request from a maker's side and a request from a user's side by a method wherein an interconnection region is formed between I/O cells and outside pads and the cells and the pads are connected by the interconnection region by arbitrarily combining them. CONSTITUTION:An interconnection region 6 of a two-layer structure which can realize an interconnection in a right-angled direction is formed between I/O cells 3, 3a, 3b and outside pads 1, 1a, 1b. The cell 3a and the pad 1a which are not situated in opposite positions are connected by an interconnection 2a and the cell 3b and the pad 1b which are situated in opposite positions are connected by an interconnection 2b, respectively. Thereby, even when an optimum cell position requested on a maker's side and an optimum pad position requested on a user's side are not almost opposite, the cells 3, 3a, 3b and the pads 1, 1a, 1b can be connected by the region 6. That is to say, both the request from makers and the request from the users can be satisfied without changing these requests.
申请公布号 JPH0357246(A) 申请公布日期 1991.03.12
申请号 JP19890191433 申请日期 1989.07.26
申请人 HITACHI LTD 发明人 SHIBATA MANABU
分类号 H01L21/3205;H01L21/82;H01L21/822;H01L23/52;H01L27/04;H01L27/118 主分类号 H01L21/3205
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