发明名称 |
Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material |
摘要 |
In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.
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申请公布号 |
US4999314(A) |
申请公布日期 |
1991.03.12 |
申请号 |
US19890333016 |
申请日期 |
1989.04.04 |
申请人 |
THOMSON-CSF |
发明人 |
PRIBAT, DIDIER;KARAPIPERIS, LEONIDAS |
分类号 |
H01L21/205;H01L21/20;H01L21/762;H01L21/822;H01L21/84 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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