| 摘要 |
PURPOSE:To enhance the mobility of a semiconductor device, by providing the first semiconductor layer essentially containing no impurity and the means to control carriers in the second semiconductor layer adjoining thereto and containing impurity and in the first layer. CONSTITUTION:An Si layer 42 of approx. 1mum is grown epitaxially with molecular beam on an Si substrate 41. Next, the Si layer 43 containing B and the Si layer 44 with the thickness of 1,000Angstrom essentially no containing impurity are successively grown epitaxially with molecular beam to successively form source and drain region 55, gate oxide film 56 and gate electrode 57. Thus, carriers are not subject to impurity scattering for high mobility allowing the FET to be short channelized. |
