| 摘要 |
PURPOSE:To reduce the manufacturing cost by making satisfactory bonding between barrier metal and electrode metal by continuously depositing and forming the barrier metal and the electrode metal without interposion of a photoresist in order to remove those metals by ion milling. CONSTITUTION:There are laminated successively on a semiconductor substrate 1 a barrier metal 2, a first electrode metal 3, and a second electrode metal 4. Then, a photoresist is formed on an unnecessary portion of the electrode 4 by etching, and further the electrode 3 and the barrier 2 are removed by ion milling using the electrode 4 as a mask, for formation of a schottky barrier diode. The barrier metal and the electrode metal are successively deposited and formed without interposition of a photoresist as above because the removal by the ion milling is performed. Accordingly, bonding between metals is improved and a title electrode can be manufactured inexpensively. |
