发明名称 PREVENTIVE METHOD OF COPPER DIFFUSION INTO POLYIMIDE PRECURSOR
摘要 <p>PURPOSE:To prevent almost completely melting/diffusion of copper into a polyimide precursor, by a method wherein after depositing a nickel plated layer whose thickness is specific on the surface of the copper with an electroless plating method, to which the whole aromatic polyamic acid solution is applied. CONSTITUTION:After the whole aromatic polyamic acid solution is applied to a board on which a copper circuit pattern is formed, the same is made into imide by heat-treating and a polyimide layer is added. In this instance, after depositing of a nickel plated layer whose thickness is at least 0.05mum and not exceeding 1.0mum with an electroless plating method, a polyamic acid solution is applied to the same. The whole aromatic polyamic acid solution is obtained by a method wherein aromatic tetracarboxylic acid dianhydride and aromatic diamine are reacted with each other, concentration of which is regulated with an appropriate solvent and polyimide precursor varnish is formed. Formation of an electroless nickel plated layer is performed with a normal method by making use of nickel/boron electroless plating bath or nickel/phosphorus electroless plating bath on the market. However, it is preferable that purity of the nickel deposited with this method is high.</p>
申请公布号 JPH0353935(A) 申请公布日期 1991.03.07
申请号 JP19890190794 申请日期 1989.07.24
申请人 SUMITOMO METAL MINING CO LTD 发明人 USHIO RYOZO
分类号 B32B15/088;B32B15/08;H05K3/46 主分类号 B32B15/088
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