| 摘要 |
<p>An oxide film having a thickness of several tens to a hundred angstroms is formed on a metal surface or at least on its portion that comes in contact with an electrically charged material, the oxide film being formed in a highly pure oxidizing atmosphere. By using this contact member, the wafer potential can be maintained to be lower than 50 V at all times yet completely preventing the wafers from being contaminated (particularly, with metal).</p> |
